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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRW3001/D Microwave Power Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. * Designed for Class B or C, Common Base Linear Power Amplifiers * Specified 28 Volt, 3.0 GHz Characteristics: Output Power -- 1.0 to 5.0 Watts Power Gain -- 5.0 to 7.0 dB Min Collector Efficiency -- 30% Min * Gold Metallization for Improved Reliability * Diffused Ballast Resistors * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRW3001 MRW3003 MRW3005 5.0 - 7.0 dB 1.5 - 3.0 GHz 1.0 - 5.0 WATTS MICROWAVE POWER TRANSISTORS MAXIMUM RATINGS Rating Collector-Base Voltage Emitter-Base Voltage Operating Junction Temperature Storage Temperature Range Symbol VCBO VEBO TJ Tstg 3001 3003 45 3.5 200 - 65 to + 200 3005 Unit Vdc Vdc C C CASE 328A-03, STYLE 1 (GP-13) MRW3001, 3003, 3005 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, RF, Junction to Case Symbol RJC 35 Max 17 8.5 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) (IC = 30 mA, VBE = 0) (IC = 50 mA, VBE = 0) Collector-Base Breakdown Voltage (IC = 1.0 mA, IE = 0) (IC = 3.0 mA, IE = 0) (IC = 5.0 mA, IE = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mA, IC = 0) Collector Cutoff Current (VCB = 28 V, IE = 0) MRW3001 MRW3003 MRW3005 V(BR)CES MRW3001 MRW3003 MRW3005 V(BR)CBO MRW3001 MRW3003 MRW3005 V(BR)EBO ICBO 45 45 45 3.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.5 0.75 1.25 Vdc mAdc 50 50 50 -- -- -- -- -- -- Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 5.0 V) (IC = 300 mA, VCE = 5.0 V) (IC = 500 mA, VCE = 5.0 V) hFE MRW3001 MRW3003 MRW3005 10 10 10 -- -- -- 120 120 120 (continued) -- REV 6 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 (c) Motorola, Inc. 1994 MRW3001 MRW3003 MRW3005 2-1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) MRW3001 MRW3003 MRW3005 Cob -- -- -- 3.5 5.7 8.4 4.0 7.0 10 pF FUNCTIONAL TESTS Common-Base Amplifier Power Gain (VCE = 28 V, Pout = 1.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 3.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 5.0 W, f = 3.0 GHz) Collector Efficiency (VCE = 28 V, Pout = 1.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 3.0 W, f = 3.0 GHz) (VCE = 28 V, Pout = 5.0 W, f = 3.0 GHz) GPB MRW3001 MRW3003 MRW3005 c MRW3001 MRW3003 MRW3005 No Degradation in Output Power 30 30 30 -- -- -- -- -- -- 7.0 6.0 5.0 -- -- -- -- -- -- % dB Load Mismatch (VCE = 28 V, f = 3.0 GHz, Load VSWR = :1, All Phase Angles) Pout = 1.0 W MRW3001 Pout = 3.0 W MRW3003 Pout = 5.0 W MRW3005 MRW3001 TYPICAL CHARACTERISTICS Psat, SATURATED OUTPUT POWER (WATTS) 2.5 Pout , OUTPUT POWER (WATTS) f = 1.5 GHz 2 GHz 2.3 GHz 3 GHz 1.5 2.5 Po(sat) 60 2 2 50 c , EFFICIENCY (%) 1.5 c @ 1 W 1 40 1 30 0.5 0.5 20 0 0 0.05 0.1 0.15 0.2 Pin, INPUT POWER (WATTS) 0.25 0.3 0 1 1.5 2 2.5 f, FREQUENCY (GHz) 3 3.5 Figure 1. Output Power versus Input Power Figure 2. Psat and versus Frequency 2.3 2 f = 1.5 GHz 3 0.2 0.4 3 Zin 0.6 0.8 1.0 1.5 2 345 10 Zo = 50 2.3 2 ZOL* f = 1.5 GHz Figure 3. Series Equivalent Input/Output Impedance MRW3001 MRW3003 MRW3005 2-2 MOTOROLA RF DEVICE DATA MRW3003 TYPICAL CHARACTERISTICS 5 f = 1.5 GHz Pout , OUTPUT POWER (WATTS) 4 3 GHz 3 2 GHz 2.3 GHz Pin, INPUT POWER (WATTS) 8 Po(sat) 80 c , EFFICIENCY (%) 6 60 2 4 c @ 3 W 40 1 2 20 0 0 0.1 0.2 0.3 0.4 Pin, INPUT POWER (WATTS) 0.5 0.6 0 1 1.5 2 2.5 f, FREQUENCY (GHz) 3 3.5 Figure 4. Output Power versus Input Power Figure 5. Psat and versus Frequency 3 2.3 2 3 2.3 Zin 2 f = 1.5 GHz 0.2 0.4 0.6 0.8 1.0 1.5 2 345 10 ZOL* f = 1.5 GHz Zo = 50 Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRW3001 MRW3003 MRW3005 2-3 MRW3005 TYPICAL CHARACTERISTICS 10 Pout , OUTPUT POWER (WATTS) 1.5 GHz Pin, INPUT POWER (WATTS) 8 2 GHz 6 2.3 GHz 4 f = 3 GHz 12 c @ 5 W 10 40 60 c , EFFICIENCY (%) 14 8 Po(sat) 20 2 6 0 0.2 0.6 1 1.4 1.8 2.2 Psat, SATURATED OUTPUT POWER (WATTS) 2.6 4 1 1.5 2 2.5 f, FREQUENCY (GHz) 3 3.5 Figure 7. Output Power versus Input Power Figure 8. Psat and versus Frequency 3 Zin 2 f = 1.5 GHz 2.3 2.3 2 0.2 0.4 0.6 0.8 1.0 1.5 2 345 10 3 ZOL* Zo = 50 f = 1.5 GHz Figure 9. Series Equivalent Input/Output Impedance 10,000,000 MTTF FACTOR (HRS x AMP2) 1,000,000 MRW3005 100,000 MRW3003 10,000 MRW3001 MTTF Factor (Normalized to 1.0 ampere2 Continuous Duty) The graph shown displays MTTF in hours x ampere2 emitter current for each of the 3.0 GHz devices. Life tests at elevated temperatures have correlated to better than 10% to the theoretical prediction for metal failure. CAUTION -- A calculation is required to obtain actual metal life. Sample MTTF calculations based on operating conditions are shown below. Junction Temperature -- C To calculate metal lifetime under any set of conditions, obtain actual data or estimate from typical performance curves. Solve for TJ (C): (1) TJ = JF Pout x 100 + Pin - Pout hc % + TFLANGE 1,000 100 90 110 130 150 170 190 TJ, JUNCTION TEMPERATURE (C) 210 230 Enter graph of MTF factor versus TJ. Obtain MTF factor. Calculate metal life by: MTF Factor (2) Metal Life in Hours = IC2 (Amps) Figure 10. MTTF Factor versus Junction Temperature MRW3001 MRW3003 MRW3005 2-4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS -B- Q 2 PL 0.15 (0.006) M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M. 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G J K N Q R S INCHES MIN MAX 0.795 0.805 0.245 0.255 0.145 0.170 0.115 0.125 0.055 0.065 0.045 0.055 0.562 BSC 0.003 0.006 0.260 0.375 0.175 0.185 0.120 0.135 0.225 0.235 0.120 0.130 MILLIMETERS MIN MAX 20.20 20.45 6.23 6.47 3.69 4.31 2.93 3.17 1.40 1.65 1.15 1.39 14.27 BSC 0.08 0.15 6.60 9.52 4.45 4.69 3.05 3.42 5.72 5.97 3.05 3.30 -A- G D 1 2 R 3 F K C N K J E S -T- SEATING PLANE STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 328A-03 ISSUE D MOTOROLA RF DEVICE DATA MRW3001 MRW3003 MRW3005 2-5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRW3001 MRW3003 MRW3005 2-6 *MRW3001/D* MRW3001/D MOTOROLA RF DEVICE DATA |
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